We use conversion electrons as a source of particles of known and constant
specific ionization to calibrate the energy deposition in the silicon vertex
detector (SVX).  We correct the 11\% variation in gain that occurs
chip-to-chip. By comparing $\phi$ and $z$ measurements of the same ionization
in a wafer, we find that the charge measurement uncertainty of individual
clusters is 18\% .  Using a truncated mean method, we have obtained a
track-by-track $\frac{dE}{dx}$ resolution of 17\%. We anticipate that adding
the ISL will improve it further by 10\% to 25\%.


Posted to /cdf/pub/cdf6751_SVX_dEdx_calib.ps
    http://www-cdf.fnal.gov/cdfnotes/cdf6751_SVX_dEdx_calib.ps

Posted by zaw@cdfsga